Pseudopotential model for Dirac electrons in graphene with line defects

TL;DR

This paper develops a pseudopotential model to analyze electron transport in graphene with line defects, calculating transmission probabilities and valley polarization effects for various defect types.

Contribution

It introduces a novel pseudopotential approach to model line defects in graphene and computes electron transmission and valley polarization.

Findings

Transmission probabilities vary with defect type.

Valley polarization can be achieved with certain defect configurations.

The model provides insights into defect-induced electron transport in graphene.

Abstract

We consider electron transport in a planar fermion model containing various types of line defects modelled by $\delta$--function pseudopotentials with different matrix coefficients. The transmission probability for electron transport through the defect line is obtained for various types of pseudopotentials. For the schematic model considered that may describe a graphene structure with different types of linear defects, the valley polarization is obtained.