Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

TL;DR

This study uses time-resolved photoemission spectroscopy to analyze the electronic structure and polarization switching dynamics at a Pt/BaTiO3/SrTiO3:Nb ferroelectric capacitor interface, revealing a significantly higher interface capacitance than the bulk.

Contribution

It provides the first detailed time-resolved analysis of the electronic response at a ferroelectric interface during polarization switching using photoemission spectroscopy.

Findings

Interface capacitance is at least 100 times higher than bulk capacitance.

Electronic response aligns with a simple RC circuit model.

Non-linear response indicates polarization switch dynamics.

Abstract

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.