Stability and plasticity of silicon nanowires: the role of wire perimeter
J. . F. Justo, R. D. Menezes, and L. V. C. Assali

TL;DR
This study uses molecular dynamics simulations to explore how the perimeter of silicon nanowires influences their stability and plasticity, revealing a universal scaling law and the importance of surface facets.
Contribution
It demonstrates that wire perimeter, not diameter, governs nanowire properties, highlighting the role of surface facets and providing a universal energy scaling law.
Findings
Wire perimeter, not diameter, is the key dimensional parameter.
Surface facets significantly influence nanowire energy.
The energy follows a universal scaling law.
Abstract
We investigated the properties of stability and plasticity of silicon nanowires using molecular dynamics simulations. We considered nanowires with <100>, <110> and <112> growth directions with several diameters and surface facet configurations. We found that the wire perimeter, and not the wire diameter, is the meaningful dimensional parameter. As a result, the surface facets play a central role on the nanowire energy, that follows a universal scaling law. Additionally, we have computed the response of a silicon nanowire to external load. The results were compared to available experimental and ab initio data.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
