Integrated Circuit Design in US High-Energy Physics

TL;DR

This whitepaper reviews the current status, challenges, and future prospects of integrated circuit design in the US for high-energy physics experiments, emphasizing technological needs, R&D, and collaborative opportunities.

Contribution

It provides a comprehensive overview of US IC design efforts for HEP, highlighting challenges, future technology outlooks, and recommendations for collaboration.

Findings

Survey of current ICs used in experiments

Identification of R&D needs for future technologies

Recommendations for US collaboration in IC design

Abstract

This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the whitepaper was distributed to the attendees before the workshop, the content was discussed at the meeting, and this document is the resulting final product. The scope of the whitepaper includes the following topics: Needs for IC technologies to enable future experiments in the three HEP frontiers Energy, Cosmic and Intensity Frontiers; Challenges in the different technology and circuit design areas and the related R&D needs; Motivation for using different fabrication technologies; Outlook of future technologies including 2.5D and 3D; Survey of ICs used in current experiments and ICs targeted for approved or proposed experiments; IC design at US institutes and recommendations for collaboration in the future.