Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

TL;DR

This study reports large linear magnetoresistance and Shubnikov-de Hass oscillations in high-quality YPdBi single crystals, revealing high-mobility bulk electrons as the key carriers and highlighting potential for quantum transport applications.

Contribution

It demonstrates large, non-saturating linear magnetoresistance and quantum oscillations in YPdBi topological insulators, advancing understanding of their transport properties.

Findings

Large linear MR up to 350% at 5K

Pronounced SdH quantum oscillations observed

High-mobility bulk electron carriers identified

Abstract

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.