In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

TL;DR

This study investigates how an in-plane magnetic field affects cyclotron resonance and relaxation times in a high-mobility Si/SiGe quantum well, revealing negative magnetic field dependence and unexpected resonance shifts.

Contribution

It provides new insights into the magnetic field dependence of cyclotron relaxation time and resonance behavior in two-dimensional electron systems.

Findings

Cyclotron relaxation time decreases with increasing in-plane magnetic field.

Resonance magnetic field shifts negatively as in-plane magnetic field increases.

Relaxation time behavior parallels transport scattering time.

Abstract

Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $\tau_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $\tau_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.