RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

TL;DR

This study investigates the RF voltage amplification in MgO-based magnetic tunnel junctions driven by field-induced ferromagnetic resonance, revealing how magnetic field parameters influence gain and proposing design strategies for enhancement.

Contribution

It demonstrates RF amplification in MgO-based MTJs via ferromagnetic resonance and discusses how to optimize gain through magnetic field control.

Findings

RF voltage gain depends on magnetic field strength and angle

Resonant dynamics in the free layer magnetization enable RF amplification

Design principles for enhancing gain are proposed

Abstract

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.