Highly efficient spin transport in epitaxial graphene on SiC

TL;DR

This paper demonstrates highly efficient spin transport in epitaxial graphene on SiC, achieving long diffusion lengths and high spin signals, paving the way for advanced spintronic devices and architectures.

Contribution

It reports the first demonstration of high-efficiency spin transport in epitaxial graphene on SiC with record spin diffusion lengths and signals.

Findings

Spin transport efficiency up to 75%

Spin signals in the mega-ohm range

Spin diffusion lengths exceeding 100 μm

Abstract

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.