Effect of the Pauli principle on photoelectron spin transport in $p^+$ GaAs
F. Cadiz, D. Paget, A. C. H. Rowe, T. Amand, P. Barate, S. Arscott

TL;DR
This study investigates how the Pauli principle influences spin transport in degenerate p+ GaAs thin films, revealing a polarization dip caused by spin-dependent diffusion and confirming the weak impact of mobility changes.
Contribution
It provides a combined theoretical and experimental analysis of spin transport under degeneracy, highlighting the role of the Pauli principle and ambipolar effects in GaAs.
Findings
Polarization dip appears at about 2 μm from excitation spot.
Degeneracy causes spin-dependent diffusion, affecting polarization profiles.
Ambipolar coupling enhances the polarization dip.
Abstract
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical…
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Taxonomy
TopicsQuantum and electron transport phenomena · Advanced Chemical Physics Studies · Magnetic properties of thin films
