Temperature Dependence of the Electrical Transport Properties of Multilayer Graphene

TL;DR

This study investigates how the electrical resistance of multilayer graphene varies with temperature, revealing a non-monotonic behavior with a maximum resistance at a certain temperature, using precise fabrication and measurement techniques.

Contribution

It provides detailed experimental data on temperature-dependent resistance of multilayer graphene, combining fabrication, characterization, and measurement methods.

Findings

Resistance increases with decreasing temperature initially.

Resistance reaches a maximum and then decreases at lower temperatures.

Results align with recent theoretical models.

Abstract

Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM) and Raman Spectroscopy. Electrical terminals are deposited on MLGs in a four-probe configuration by electron-beam lithography, gold/titanium thermal evaporation, and lift-off. The electrical resistance is measured from room temperature down to 2 K. The electrical resistance of the MLGs shows an increase with decreasing temperature, and then decreases after reaching a maximum value. These results are compared with recent experimental and theoretical data from the literature.