Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches
Ankit Jain, Muhammad Ashraful Alam

TL;DR
This paper investigates conditions for achieving hysteresis-free abrupt switching in Landau switches, emphasizing the importance of a flat energy landscape and challenging traditional thermodynamic limits.
Contribution
It provides a classification of charge-based switches based on energy landscapes and identifies key conditions for hysteresis-free abrupt switching in Landau switches.
Findings
A flat energy landscape is essential for hysteresis-free abrupt switching.
Hysteresis-free smooth switching can be achieved by stabilizing the unstable gate insulator.
The study offers insights that could simplify the design of next-generation charge-based logic switches.
Abstract
Sub-threshold swing (S) defines the sharpness of ON-OFF switching of a Field Effect Transistor (FET) with S=0 corresponding to abrupt switching characteristics. While thermodynamics dictates S to be greater than or equal to 60mV/dec for classical FETs, "Landau switches" use inherently unstable gate insulators to achieve abrupt switching. Unfortunately, S=0 switching is always achieved at the expense of an intrinsic hysteresis, making these switches unsuitable for low-power applications. The fundamental question therefore remains: Under what condition, hysteresis-free abrupt switching can be achieved in a Landau switch? In this paper, we first provide an intuitive classification of all charge based switches in terms of their energy landscapes and identify two-well energy landscape as the characteristic feature of Landau switches. We then use nanoelectromechanical field effect transistor…
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