A planar ion trap chip with integrated structures for an adjustable magnetic field gradient
P. J. Kunert, D. Georgen, L. Bogunia, T. M. Baig, M. A. Baggash, M., Johanning, and Ch. Wunderlich

TL;DR
This paper introduces a segmented surface ion trap chip with integrated current-carrying structures that generate a magnetic field gradient, enabling individual ion addressing and advancing quantum information processing capabilities.
Contribution
The work presents a novel ion trap design with integrated magnetic field gradient structures, demonstrating effective ion trapping, magnetic field mapping, and individual ion addressing.
Findings
Successful trapping of 172Yb+ ion strings
Magnetic field gradients enable individual ion addressing
Trap performance characterized via RF-optical spectroscopy
Abstract
We present the design, fabrication, and characterization of a segmented surface ion trap with integrated current carrying structures. The latter produce a spatially varying magnetic field necessary for magnetic gradient induced coupling between ionic effective spins. We demonstrate trapping of strings of 172Yb+ ions, characterize the performance of the trap and map magnetic fields by radio frequency-optical double resonance spectroscopy. In addition, we apply and characterize the magnetic gradient and demonstrate individual addressing in a string of three ions using RF radiation.
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