Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

TL;DR

This study investigates the unique total ionizing dose effects in 0.2 um partially-depleted SOI devices, revealing worst-case bias conditions and mechanisms involving charge trapping and short channel effects.

Contribution

It introduces a charge distribution model and explains the TID effects and short channel effects using dipole theory, providing new insights into SOI device degradation under irradiation.

Findings

ON irradiation bias is the worst-case bias for both transistor types.

Positive charge trapping in STI oxide causes performance degradation.

Short channel devices exhibit larger leakage and threshold shifts.

Abstract

The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the ON irradiation bias configuration is the worst-case bias for both front-gate and back-gate transistor. To understand the mechanism, a charge distribution model is proposed. We think that the performance degradation of the devices is due to the radiation induced positive charge trapped in the bottom corner of shallow trench isolation (STI) oxide. In addition, comparing the irradiation responses of short and long channel devices under different drain bias, the short channel transistors show a larger degeneration of leakage current and threshold voltage. The dipole theory is introduced to explain the TID enhanced short channel effect.