Doping-Dependent Raman Resonance in the Model High-Temperature Superconductor HgBa2CuO4+d
Yuan Li, M. Le Tacon, Y. Matiks, A. V. Boris, T. Loew, C. T. Lin, Lu, Chen, M. K. Chan, C. Dorow, L. Ji, N. Barisic, X. Zhao, M. Greven, B., Keimer

TL;DR
This study investigates how doping affects Raman resonance in the high-temperature superconductor HgBa2CuO4+d, revealing a doping-dependent shift in resonance conditions linked to inter-band transitions and magnetic fluctuations.
Contribution
It uncovers the doping-dependent change in Raman resonance conditions and connects it to inter-band optical transitions, resolving discrepancies in magnetic fluctuation detection methods.
Findings
Resonant Raman enhancement varies strongly with doping.
Rearrangement of inter-band optical transitions occurs with doping.
Maximum change coincides with peak antinodal superconducting gap.
Abstract
We study the model high-temperature superconductor HgBa2CuO4+d with electronic Raman scattering and optical ellipsometry over a wide doping range. The resonant Raman condition which enhances the scattering cross section of "two-magnon" excitations is found to change strongly with doping, and it corresponds to a rearrangement of inter-band optical transitions in the 1-3 eV range seen by ellipsometry. This unexpected change of the resonance condition allows us to reconcile the apparent discrepancy between Raman and x-ray detection of magnetic fluctuations in superconducting cuprates. Intriguingly, the strongest variation occurs across the doping level where the antinodal superconducting gap reaches its maximum.
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