Room temperature operational single electron transistor on the macroscopic surface of hydrogenated diamond like carbon
N.R.Ray, J. Datta, H. S.Biswas, P.Sen, K.Bagani

TL;DR
This paper demonstrates a room-temperature single electron transistor on a large-area hydrogenated diamond-like carbon surface, overcoming size limitations of Coulomb blockade and aligning with theoretical predictions for potential quantum and metrological applications.
Contribution
It introduces a novel method to create room-temperature single electron transistors on macroscopic surfaces, bypassing traditional size constraints.
Findings
Single electron transistor operates at room temperature.
Successful on large-area hydrogenated diamond-like carbon surface.
Results align with theoretical models.
Abstract
This paper shows single electron transistor at room temperature,created on macroscopic system-the two-dimensional large area surface of our hydrogenated diamond like carbon thin film. Our results, free from the limitation of lowering the size of coulomb blockade in sub-nanometer range with the existing unprofitable process,are consistent with the theoretical results and will be relevant for future practical applications in the realm of atomic physics, quantum phenomenon and metrology.
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Taxonomy
TopicsDiamond and Carbon-based Materials Research · Graphene research and applications · Quantum and electron transport phenomena
