Mott-Anderson transition in disordered charge transfer model: insights from typical medium theory
W. S. Oliveira, M. C. O. Aguiar, V. Dobrosavljevic

TL;DR
This paper demonstrates that a simplified typical medium theory approach effectively captures the key features and critical behavior of the Mott-Anderson transition in a disordered charge-transfer model, providing new insights into its mechanisms.
Contribution
The study shows that TMT-DMFT can qualitatively and quantitatively reproduce the phase diagram and critical phenomena of the Mott-Anderson transition, simplifying understanding of the model.
Findings
TMT-DMFT captures the phase diagram and Griffiths phase.
It reproduces the critical behavior near the transition.
Provides new insights into the transition mechanism.
Abstract
The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational (statistical dynamical mean field theory) studies. Here we show that a much simpler typical medium theory approach (TMT-DMFT) to the same model is able to capture most qualitative and even quantitative aspects of the phase diagram, the emergence of an intermediate electronic Griffiths phase, and the critical behavior close to the metal-insulator transition. Conceptual and mathematical simplicity of the TMT-DMFT formulation thus makes it possible to gain useful new insight into the mechanism of the Mott-Anderson transition in these models.
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