Unified Boltzmann-transport theory for the drag resistivity close to a second-order phase transition

TL;DR

This paper develops a comprehensive Boltzmann-transport framework to analyze drag resistivity near second-order phase transitions, accounting for fluctuations and various system parameters, with applications to cold atomic gases and semiconductor systems.

Contribution

It introduces a unified theory for drag resistivity near phase transitions, including fluctuation effects and diverse system configurations, with numerical applications to experimental setups.

Findings

Proximity to phase transition enhances drag resistivity near critical temperature.

Derived temperature dependence of drag resistivity enhancement.

Numerical results for cold atomic gases and semiconductor quantum wells.

Abstract

We present a unified Boltzmann-transport theory for the drag resistivity in two-component systems close to a second-order phase transition. We find general expressions for the drag resistivity in two and three spatial dimensions, for arbitrary population and mass imbalance, for particle- and hole-like bands, and show how to incorporate, at the Gaussian level, the effect of fluctuations close to a phase transition. We find that the proximity to the phase transition enhances the drag resistivity upon approaching the critical temperature from above, and we qualitatively derive the temperature dependence of this enhancement for various cases. In addition, we present numerical results for two concrete experimental systems: i) three-dimensional cold atomic Fermi gases close to a Stoner transition and ii) two-dimensional spatially-separated electron and hole systems in semiconductor double quantum wells.