Electronic and Magnetic Properties of Zigzag Boron-Nitride Nanoribbons with Even and Odd-line Stone-Wales (5-7 pair) Defects
Sharma SRKC Yamijala, Swapan K Pati

TL;DR
This study investigates how even and odd-line Stone-Wales defects affect the electronic and magnetic properties of zigzag boron-nitride nanoribbons, revealing distinct semi-conducting and half-metallic behaviors.
Contribution
It provides a detailed first-principles analysis of defect-induced magnetic and electronic property variations in zigzag BN nanoribbons, highlighting the impact of defect parity.
Findings
Odd-line defects lead to spin-polarized semiconductors.
Even-line defects result in anti-ferromagnetic half-metallic behavior.
Properties are robust against defect position and ribbon width variations.
Abstract
Spin-polarized first-principles calculations have been performed on zigzag Boron-Nitride Nanoribbons (z-BNNRs) with lines of alternating fused pentagon (P) and heptagon (H) rings (Pentagon-Heptagon-line-defect) at single edge as well as at both edges. The number of line (n) of the Pentagon-Heptagon-defect has been varied from 1 to 8 for 10-zBNNRs. Among the different spin-configurations which we have studied, we find that, the spin-configuration with ferromagnetic ordering at each edge and anti-ferromagnetic ordering across the edges is quite interesting. For this spin-configuration, we find that, if the introduced PH-line-defect is odd numbered, the systems behave as spin-polarized semi-conductors, but, for even numbered, all the systems show interesting anti-ferromagnetic half-metallic behavior. Robustness of these results has been cross checked by the variation of the line-defect…
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