Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

TL;DR

This paper evaluates Geant4's accuracy in simulating low-energy electron interactions in semiconductor detectors below 1 MeV, emphasizing backscattering and detector response comparison with experimental data.

Contribution

It assesses the impact of simulation parameters and scattering models on Geant4's accuracy for low-energy electron interactions in semiconductor detectors.

Findings

Good agreement between Geant4 simulations and experimental data.

Backscattering coefficients are sensitive to scattering models and parameters.

Simulation parameters significantly influence detector response accuracy.

Abstract

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to \beta{} particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.