Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

TL;DR

This study compares the electronic properties of InAs nanowire transistors made from wurtzite and zincblende phases, revealing how crystal structure influences device performance.

Contribution

It provides a direct comparison of electronic characteristics of pure wurtzite and zincblende InAs nanowires in transistor applications.

Findings

Differences in transfer characteristics between phases.

Variation in field-effect mobility with temperature.

Insights into phase-dependent electronic behavior.

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.