Sputtered TiN films for superconducting coplanar waveguide resonators
Shinobu Ohya, Ben Chiaro, Anthony Megrant, Charles Neill, Rami, Barends, Yu Chen, Julian Kelly, David Low, Josh Mutus, Peter O'Malley, Pedram, Roushan, Daniel Sank, Amit Vainsencher, James Wenner, Theodore C. White, Yi, Yin, B. D. Schultz, Chris J Palmstr{\o}m, Benjamin A. Mazin

TL;DR
This study systematically investigates how deposition conditions affect the structural, compositional, and superconducting properties of TiN films used in coplanar waveguide resonators, highlighting the importance of controlling contaminants and strain.
Contribution
It provides new insights into optimizing sputtering parameters to produce high-quality TiN films with improved superconducting resonator performance.
Findings
Resistivity increases with higher deposition pressure and oxygen content.
Higher oxygen content correlates with increased quality factor in resonators.
Contaminant levels significantly influence film properties and device performance.
Abstract
We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly stoichiometric composition of Ti(1-x)N(x) (x=0.5), the film resistivity increases, the dominant crystal orientation changes from (100) to (111), grain boundaries become clearer, and the strong compressive strain changes to weak tensile strain. The TiN films absorb a high concentration of contaminants including hydrogen, carbon, and oxygen when they are exposed to air after deposition. With the target-substrate distance set to 88 mm the contaminant levels increase from ~0.1% to ~10% as the pressure is increased from 2 to 9 mTorr. The contaminant concentrations also correlate with in-plane distance from the center of the substrate and increase by…
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Taxonomy
TopicsAcoustic Wave Resonator Technologies · Metal and Thin Film Mechanics · Particle accelerators and beam dynamics
