High Q SiC microresonators

TL;DR

This paper presents high-Q silicon carbide microresonators fabricated on silicon substrates, achieving significant optical confinement and a Q factor of 18000, advancing integrated photonics applications.

Contribution

The work demonstrates the fabrication of high-Q SiC microresonators on silicon, utilizing standard epitaxial growth and innovative undercutting techniques for enhanced optical performance.

Findings

Achieved a Q factor of 18000 in SiC microring resonators

Successfully fabricated 20 um radius suspended resonators on SiC-on-silicon

Demonstrated high optical confinement using SiC's stiffness and substrate undercutting

Abstract

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.