Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

TL;DR

This paper introduces an edge excitation geometry for photoluminescence measurements in bulk n-InP, offering a less surface-sensitive method to study intrinsic emission spectra and carrier distributions in semiconductors.

Contribution

The authors present a novel edge excitation technique that reduces surface effects, enabling more accurate investigation of intrinsic emission spectra in doped direct-band semiconductors.

Findings

Edge excitation geometry effectively probes intrinsic emission spectra.

Method reduces sensitivity to surface properties and carrier kinetics.

Applicable to studying non-equilibrium carrier distributions.

Abstract

The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors.