Observation of a Berry phase anti-damping spin-orbit torque
H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V., Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K., Vyborny, A. J. Ferguson, T. Jungwirth

TL;DR
This paper reports the observation of a Berry phase-induced anti-damping spin-orbit torque in a ferromagnetic semiconductor, demonstrating a scattering-independent mechanism for magnetization control relevant for magnetic memory technology.
Contribution
It provides experimental evidence of a Berry phase-based anti-damping SOT in a ferromagnetic semiconductor, distinct from spin Hall effect contributions.
Findings
Observation of Berry phase-induced anti-damping SOT
Elimination of SHE-related contributions in the experiment
Microscopic modeling supporting the Berry phase mechanism
Abstract
Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-damping spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-damping STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-damping SOT stemming…
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Taxonomy
TopicsMagnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Atomic and Subatomic Physics Research
