Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

TL;DR

This paper investigates how polarization and charge dynamics influence the performance of ferroelectric-carbon nanotube devices, revealing that charge effects can mask ferroelectric behavior and emphasizing the importance of high-quality interfaces.

Contribution

It provides a direct comparison of ferroelectric and dielectric field effect transistors, highlighting the competition between polarization and charge effects in device performance.

Findings

Charge dynamics can mask up to 40% of the ferroelectric field effect.

High-quality ferroelectric films and interfaces are essential for optimal device performance.

Ferroelectric and dielectric effects compete, affecting transconductance in nanotube devices.

Abstract

To optimize the performance of multifunctional carbon nanotube-ferroelectric devices, it is necessary to understand both the polarization and charge dynamics effects on their transconductance. Directly comparing ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3 field effect transistors, we show that the two effects strongly compete, with transient charge dynamics initially masking up to 40% of the ferroelectric field effect. For applications, it is therefore crucial to maximize the quality of the ferroelectric film and the interface with the carbon nanotube to take full advantage of the switchable polarization.