Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As
J. Fujii, B. R. Salles, M. Sperl, S. Ueda, M. Kobata, K. Kobayashi, Y., Yamashita, P. Torelli, M. Utz, C. S. Fadley, A. X. Gray, J. Minar, J. Braun,, H. Ebert, I. Di Marco, O. Eriksson, P. Thunstr\"om, G. H. Fecher, S. Ouardi,, H.Stryhanyuk, E. Ikenaga, C.H. Back
TL;DR
This study uses high-resolution spectroscopy and theoretical calculations to analyze how Mn states influence the electronic structure and ferromagnetism in (Ga,Mn)As across various doping levels.
Contribution
It provides detailed insight into the electronic character of Mn states in (Ga,Mn)As and their role in enabling ferromagnetism, supported by experimental and theoretical analysis.
Findings
Mn states are delocalized near the valence band top
Mn doping induces ferromagnetic properties
Electronic character of Mn states is consistent across doping levels
Abstract
We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.
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