Electrical switching dynamics and broadband microwave characteristics of VO2 RF devices
Sieu D. Ha, You Zhou, Christopher J. Fisher, Shriram Ramanathan, and, Jacob P. Treadway

TL;DR
This study demonstrates VO2-based RF devices with large resistance modulation, fast switching, and broadband microwave capabilities, highlighting potential for high-speed, tunable microwave applications.
Contribution
The paper presents integrated VO2 coplanar waveguides with detailed RF characterization, transient switching analysis, and modeling, advancing understanding of VO2's microwave switching dynamics.
Findings
Resistance modulation >10^3 in VO2 devices
Switching times of ~10 ns and several μs
Flat insertion loss of 2.95 dB up to 13.5 GHz
Abstract
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10^3) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several {\mu}s. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the…
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