Electrical spin injection into graphene through monolayer hexagonal boron nitride

TL;DR

This paper demonstrates electrical spin injection into bilayer graphene using a monolayer of hexagonal boron nitride as a tunnel barrier, with detection via non-local magnetoresistance, advancing spintronic device integration.

Contribution

It introduces a novel method for spin injection into graphene through a monolayer h-BN tunnel barrier, combining fabrication and measurement techniques.

Findings

Successful spin injection into bilayer graphene demonstrated.

Monolayer h-BN acts as an effective tunnel barrier.

Non-local magnetoresistance confirms spin transport.

Abstract

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.