Transport properties of p-type metal-oxide-semiconductor inversion layer in (110) and (111) silicon channel under uniaxial stress

TL;DR

This paper theoretically investigates how uniaxial stress affects the valence subband and transport properties of p-type MOS inversion layers in (110) and (111) silicon channels, revealing stress-dependent mobility variations.

Contribution

It provides new theoretical insights and compact expressions for scattering rates in strained silicon channels, highlighting stress orientations that optimize mobility.

Findings

Mobility is highly sensitive to effective mass changes under stress.

Optimal mobility directions identified for (110) channels with specific stress orientations.

Derived expressions for scattering rates under uniaxial stress.

Abstract

Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration effective mass, conductivity effective mass, and mobility are calculated based on Luttinger-Kohn Hamiltonian [16]. Three compact expressions of scattering rate are derived in this paper. The direction of applied uniaxial stresses considered is in either parallel or perpendicular to channel. My results show mobility is very sensitive to effective mass under different stresses. The favorable mobility directions are found in (110) system with -3 GPa stress parallel to channel and +3 GPa stress perpendicular to channel.