Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
Gui-Bin Liu, Wen-Yu Shan, Yugui Yao, Wang Yao, Di Xiao

TL;DR
This paper develops a simplified three-band tight-binding model for monolayer transition metal dichalcogenides, accurately capturing low-energy electronic properties and spin-orbit effects across the entire Brillouin zone.
Contribution
It introduces a minimal three-orbital tight-binding model fitted to first-principles data, effectively describing the electronic structure of $MX_2$ monolayers including spin-orbit interactions.
Findings
Accurately reproduces band-edge properties at $ ext{K}$ points
Captures Berry curvature and valley-dependent spin splitting
Efficiently models entire Brillouin zone with third-nearest-neighbor hoppings
Abstract
We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides (=Mo, W; =S, Se, Te). As the conduction and valence band edges are predominantly contributed by the , , and orbitals of atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all monolayers. The TB model involving only the nearest-neighbor - hoppings is sufficient to capture the band-edge properties in the valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor - hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in…
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