Strain engineering of magnetic states of vacancy-decorated hexagonal boron nitride

TL;DR

This study investigates how biaxial strain influences the magnetic states of vacancy-decorated hexagonal boron nitride monolayers, revealing strain-induced magnetic switching that could enable advanced spintronic devices.

Contribution

It demonstrates for the first time that biaxial strain can switch magnetic states in vacancy-decorated h-BN monolayers, offering a new approach for spintronic applications.

Findings

Strain induces magnetic state switching in vacancy-decorated h-BN.

Biaxial strain affects electronic properties significantly.

Potential for low-dimensional spintronic device operation.

Abstract

Novel materials with tunable magnetic states play a significant role in the development of next-generation spintronic devices. In this paper, we examine the role of biaxial strain on the electronic properties of vacancy-decorated hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. We found that the strain can lead to switching of the magnetic state for h-BN monolayers with boron vacancy or divacancy. Our findings promise a new route for the operation of low-dimensional spintronic devices.