Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

TL;DR

This study demonstrates the growth and optical characterization of non-polar a-plane InGaN quantum dots with short exciton lifetimes, showing suppressed internal electric fields and sharp emission peaks, advancing quantum dot optoelectronic applications.

Contribution

We introduce a growth method for non-polar InGaN quantum dots with short exciton lifetimes and detailed optical characterization, highlighting suppressed internal electric fields.

Findings

Exciton lifetime of 538 ps in non-polar QDs

Sharp emission peaks with 1 meV linewidth at 4.2 K

Suppressed internal electric fields compared to c-plane QDs

Abstract

We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.