Effects of excitation frequency on high-order terahertz sideband generation in semiconductors
Xiao-Tao Xie, Bang-Fen Zhu, Ren-Bao Liu

TL;DR
This paper theoretically explores how the excitation frequency influences the high-order terahertz sideband generation spectrum in semiconductors, revealing the dependence on detuning and the underlying quantum processes.
Contribution
It introduces a detailed quantum trajectory model to explain the effects of laser detuning on the HSG spectrum's plateau features in semiconductors.
Findings
The HSG plateau depends on the detuning between laser and band gap.
Large probability of recombination occurs when electron-hole pairs are driven without tunneling.
The high-frequency cutoff is approximately 3.2 times the ponderomotive energy.
Abstract
We theoretically investigate the effects of the excitation frequency on the plateau of high-order terahertz sideband generation (HSG) in semiconductors driven by intense terahertz (THz) fields. We find that the plateau of the sideband spectrum strongly depends on the detuning between the NIR laser field and the band gap. We use the quantum trajectory theory (three-step model) to understand the HSG. In the three-step model, an electron-hole pair is first excited by a weak laser, then driven by the strong THz field, and finally recombine to emit a photon with energy gain. When the laser is tuned below the band gap (negative detuning), the electron-hole generation is a virtual process that requires quantum tunneling to occur. When the energy gained by the electron-hole pair from the THz field is less than 3.2 times the ponderomotive energy, the electron and the hole can be driven to the…
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