Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure
M. K. Tran, J. Levallois, P. Lerch, J. Teyssier, A. B. Kuzmenko, G., Aut\`es, O. V. Yazyev, A. Ubaldini, E. Giannini, D. van der Marel, A. Akrap

TL;DR
This study uses infrared, Raman spectroscopy, and optical measurements to investigate pressure-induced structural and electronic changes in BiTeI, revealing a phase transition at 9 GPa that affects its topological properties.
Contribution
It provides new experimental evidence of a crystal structure transition in BiTeI at 9 GPa and its impact on the material's electronic and topological phases.
Findings
Optical gap vanishes above 9 GPa
Phase transition at 9 GPa involves crystal structure change
High-pressure topological phase likely inhibited
Abstract
BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to GPa. The gap feature in the optical conductivity vanishes above GPa and does not reappear up to at least GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at GPa. Using high pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring.
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