Realization of a double barrier resonant tunneling diode for cavity polaritons
Hai Son Nguyen, Dmitry Vishnevsky, Chris Sturm, Dimitrii Tanese,, Dmitry Solnyshkov, Elisabeth Galopin, Aristide Lema\^itre, Isabelle Sagnes,, Alberto Amo, Guillaume Malpuech, Jacqueline Bloch

TL;DR
This paper demonstrates a double barrier resonant tunneling diode for cavity polaritons, showing sharp transmission resonances, optical gating control, and interaction effects at high densities, advancing polariton-based optoelectronic devices.
Contribution
It presents the first realization of a double barrier resonant tunneling diode for cavity polaritons with optical control and interaction signatures.
Findings
Sharp transmission resonances observed
Optical gating effectively controls device transmission
Transmission profile distortion indicates polariton-polariton interactions
Abstract
We report on the realization of a double barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We use a non-resonant beam can be used as an optical gate and control the device transmission. Finally we evidence distortion of the transmission profile when going to the high density regime, signature of polariton-polariton interactions.
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