Double injection in graphene p-i-n structures

TL;DR

This paper investigates the electron and hole injection processes in graphene p-i-n structures under forward bias, using hydrodynamic and Poisson equations to analyze carrier distributions and current-voltage behavior for potential laser applications.

Contribution

It introduces a combined analytical and numerical model for double injection in graphene p-i-n structures, highlighting the impact of collisions on carrier dynamics and device characteristics.

Findings

Carrier distributions are significantly affected by collisions.

The model predicts current-voltage characteristics accurately.

Results aid in optimizing graphene-based terahertz and infrared lasers.

Abstract

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.