DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories

TL;DR

The paper introduces DSTT-MRAM, a differential spin Hall MRAM device that offers significantly improved write energy efficiency and faster read speeds for on-chip memory applications.

Contribution

It proposes a novel differential device structure utilizing spin Hall effect, achieving enhanced energy efficiency and speed over traditional STT-MRAM cells.

Findings

10X reduction in write energy

1.6X faster read operation

Promising for high-performance on-chip memories

Abstract

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. Moreover, due to inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10X improvement in write energy over the standard 1T1R STT-MRAM memory cell, and 1.6X faster read operation compared to single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.