Vapor-liquid-solid growth of serrated GaN nanowires: Shape selection driven by kinetic frustration

TL;DR

This study demonstrates controlled vapor-liquid-solid growth of GaN nanowires with specific morphologies by understanding and manipulating kinetic frustration effects during growth.

Contribution

The paper introduces a theoretical model linking growth morphology to kinetic frustration and validates it through experimental variations in growth conditions.

Findings

Controlled nanowire shapes achieved via kinetic frustration understanding

Model accurately predicts morphology trends based on growth parameters

Morphological control enhances potential for nanoelectronic device applications

Abstract

Compound semiconducting nanowires are promising building blocks for several nanoelectronic devices yet the inability to reliably control their growth morphology is a major challenge. Here, we report the Au-catalyzed vapor-liquid-solid (VLS) growth of GaN nanowires with controlled growth direction, surface polarity and surface roughness. We develop a theoretical model that relates the growth form to the kinetic frustration induced by variations in the V(N)/III(Ga) ratio across the growing nanowire front. The model predictions are validated by the trends in the as-grown morphologies induced by systematic variations in the catalyst particle size and processing conditions. The principles of shape selection highlighted by our study pave the way for morphological control of technologically relevant compound semiconductor nanowires.