Structural ordering driven anisotropic magnetoresistance, anomalous Hall resistance and its topological overtones in full-Heusler Co2MnSi thin films

TL;DR

This study investigates how annealing temperature influences the structural, magnetic, and electronic transport properties of Co2MnSi thin films, revealing correlations between ordering, magnetoresistance, Hall effects, and topological features.

Contribution

It provides new insights into the relationship between structural order and electronic transport phenomena, including topological Hall effects, in full-Heusler Co2MnSi thin films.

Findings

Structural order improves with higher annealing temperatures.

Magnetic moments approach Slater-Pauling values at high order.

Topological Hall effect observed in disordered phase.

Abstract

We report the evolution of crystallographic structure, magnetic ordering and electronic transport in thin films of full-Heusler alloy Co$_2$MnSi deposited on (001) MgO with annealing temperatures ($T_A$). By increasing the $T_A$ from 300$^\circ$C to 600$^\circ$C, the film goes from a disordered nanocrystalline phase to $B2$ ordered and finally to the $L2_1$ ordered alloy. The saturation magnetic moment improves with structural ordering and approaches the Slater-Pauling value of $\approx 5.0 \mu_B$ per formula unit for $T_A$ = 600$^\circ$C. At this stage the films are soft magnets with coercive and saturation fields as low as $\approx$ 7 mT and 350 mT, respectively. Remarkable effects of improved structural order are also seen in longitudinal resistivity ($\rho_{xx}$) and residual resistivity ratio. A model based upon electronic transparency of grain boundaries illucidates the transition from a state of negative $d\rho/dT$ to positive $d\rho/dT$ with improved structural order. The Hall resistivity ($\rho_{xy}$) derives contribution from the normal scattering of charge carriers in external magnetic field, the anomalous effect originating from built-in magnetization and a small but distinct topological Hall effect in the disordered phase. The carrier concentration ($n$) and mobility ($\mu$) have been extracted from the high field $\rho_{xy}$ data. The highly ordered films are characterized by $n$ and $\mu$ of 1.19$\times$ 10$^{29}$ m$^{-3}$ and 0.4 cm$^2V^{-1}s^{-1}$ at room temperature. The dependence of $\rho_{xy}$ on $\rho_{xx}$ indicates the dominance of skew scattering in our films, which shows a monotonic drop on raising the $T_A$. The topological Hall effect is analyzed for the films annealed at 300$^\circ$C. ......