Photoluminescence in Ga/Bi co-doped silica glass

TL;DR

This study investigates the photoluminescence properties of Ga/Bi co-doped silica glass, identifying Bi$^+$ ions as the main emitters and exploring energy transfer mechanisms between ions and defects across a wide temperature range.

Contribution

It provides new insights into the photoluminescence mechanisms in Ga/Bi co-doped silica, including identification of Bi$^+$ ions and their interaction with defects, along with an energy level diagram.

Findings

Bi$^+$ ions emit in 480-820 nm range.

NIR PL around 1100 nm involves two bands.

Energy transfer occurs via quadrupole-quadrupole and dipole-quadrupole interactions.

Abstract

Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi$^+$ ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi$^+$ ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi$^+$ ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi$^+$ ion interacting with this defect.