Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

TL;DR

This paper introduces a multiplexed measurement method using on-chip FET switches to efficiently test multiple Si/SiGe quantum devices at cryogenic temperatures, improving throughput and device comparison.

Contribution

It presents a novel on-chip FET switch integration technique for high-throughput cryogenic testing of quantum dots, addressing wiring constraints and enabling scalable device characterization.

Findings

Successful multiplexed measurement of three quantum-point contact channels

Comparison of threshold and pinch-off voltages within a single cool-down

Demonstration of scalable testing approach for quantum devices

Abstract

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator.