Optimisation of CMOS pixel sensors for high performance vertexing and tracking

TL;DR

This paper presents preliminary results on 0.18 micrometer CMOS pixel sensors with improved speed and radiation tolerance, aiming to meet the requirements of high-performance vertexing and tracking in particle physics experiments.

Contribution

It introduces a new prototype sensor in 0.18 micrometer technology with high resistivity epitaxial layer, advancing CMOS sensors for high-speed, radiation-tolerant applications.

Findings

Preliminary test results show improved performance.

Sensor design suitable for large-scale particle detectors.

Development strategy for full-scale sensor production.

Abstract

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.