Nuclear magnetic resonance as a probe of electronic states of Bi2Se3
D. M. Nisson, A. P. Dioguardi, P. Klavins, C. H. Lin, K. R. Shirer,, A.C. Shockley, J. Crocker, N. J. Curro

TL;DR
This study uses nuclear magnetic resonance to investigate the electronic states of Bi2Se3 and related materials, revealing how carrier concentration and localized spins influence their magnetic and electronic properties.
Contribution
It provides new insights into the hyperfine interactions and the role of localized spins in Bi2Se3-based materials using NMR techniques.
Findings
Knight shift correlates with carrier concentration
Localized spins dominate NMR linewidths and relaxation rates
Se vacancies may influence magnetic properties
Abstract
We present magnetotransport and Bi-209 nuclear magnetic resonance (NMR) data on a series of single crystals of Bi2Se3, Bi2Te2Se and Cu_xBi2Se3 with varying carrier concentrations. The Knight shift of the bulk nuclei is strongly correlated with the carrier concentration via a hyperfine coupling of 27 ueV, which may have important consequences for scattering of the protected surface states. Surprisingly we find that the NMR linewidths and the spin lattice relaxation rate appear to be dominated by the presence of localized spins, which may be related to the presence of Se vacancies.
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