Evidence of a full gap in LaFeAsO$_{1-x}$F$_x$ thin films from infrared spectroscopy

TL;DR

This study uses infrared spectroscopy to demonstrate the presence of a full, nodeless superconducting gap in LaFeAsO$_{1-x}$F$_x$ thin films, indicating at least one carrier system with a full gap.

Contribution

It provides the first combined infrared spectroscopy evidence of a full superconducting gap in LaFeAsO$_{1-x}$F$_x$ thin films, highlighting the gap's nodeless nature.

Findings

Infrared transmission fits a two-component model including a full gap.

Photo-induced quasiparticle dynamics show a recombination bottleneck consistent with a full gap.

Evidence suggests at least one carrier system has a full, nodeless superconducting gap.

Abstract

We report conventional and time-resolved infrared spectroscopy on LaFeAsO$_{1-x}$F$_x$ superconducting thin films. The far-infrared transmission can be quantitatively explained by a two-component model including a conventional s-wave superconducting term and a Drude term, suggesting at least one carrier system has a full superconducting gap. Photo-induced studies of excess quasiparticle dynamics reveal a nanosecond effective recombination time and temperature dependence that agree with a recombination bottleneck in the presence of a full gap. The two experiments provide consistent evidence of a full, nodeless though not necessarily isotropic, gap for at least one carrier system in LaFeAsO$_{1-x}$F$_x$.