Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian
Atsunori Sakurai, Yoshitaka Tanimura

TL;DR
This paper models quantum dissipative dynamics in resonant tunneling diodes using a Caldeira-Leggett Hamiltonian, revealing self-excited current oscillations and complex behaviors in the negative differential resistance region.
Contribution
It introduces a non-perturbative, non-Markovian approach to study current oscillations in resonant tunneling diodes with a self-consistent potential model.
Findings
Observation of hysteresis and plateau behaviors in I-V characteristics.
Identification of self-excited high-frequency current oscillations under weak system-bath coupling.
Discovery of two distinct oscillation types with different dynamics in the Wigner space.
Abstract
The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira-Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study non-Markovian and non-perturbative thermal effects at finite temperature in a rigorous manner. We study current variation in time and the current-voltage (I-V) relation of the resonant tunneling diode for several widths of the contact region, which consists of doped GaAs. Hysteresis and both single and double plateau-like behavior are observed in the negative differential resistance (NDR) region. While all of the current oscillations decay in time in the NDR region in…
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