Ballistic collective group delay and its Goos-H\"{a}nchen component in graphene

TL;DR

This paper theoretically explores the ballistic collective group delay in graphene, revealing the influence of Goos-H"{a}nchen shifts and proposing an experimental method to measure these delays via conductance differences under magnetic fields.

Contribution

It introduces a novel approach linking the collective group delay and Goos-H"{a}nchen component in graphene to measurable conductance differences, expanding understanding of electron dynamics.

Findings

Goos-H"{a}nchen shifts contribute to the group delay.

Proposed conductance-based measurement method for delays.

Identified a nonzero self-interference delay in graphene.

Abstract

We theoretically investigate the experimental observable of the ballistic collective group delay (CGD) of all the particles on the Fermi surface in graphene. First, we reveal that, lateral Goos-H\"{a}nchen (GH) shifts along barrier interfaces contribute an inherent component in the individual group delay (IGD). Then, by linking the complete IGD to spin precession through a dwell time, we suggest that, the CGD and its GH component can be electrostatically measured by a conductance difference in a spin-precession experiment under weak magnetic fields. Such an approach is feasible for almost arbitrary Fermi energy. We also indicate that, it is a generally nonzero self-interference delay that relates the IGD and dwell time in graphene.