Femtosecond Time-resolved MeV Electron Diffraction
Pengfei Zhu, H. Berger, J. Cao, J. Geck, Y. Hidaka, R. Kraus, S., Pjerov, Y. Shen, R.I Tobey, Y. Zhu, J.P. Hill, X.J. Wang

TL;DR
This paper demonstrates femtosecond electron diffraction using high-brightness MeV electron beams, achieving high-quality, single-shot diffraction patterns with temporal resolution of 130 fs, highlighting advantages like longer coherence and potential for 10 fs resolution.
Contribution
The study experimentally demonstrates femtosecond electron diffraction with MeV electrons, achieving high-quality patterns and 130 fs temporal resolution, advancing the capabilities of ultrafast electron diffraction techniques.
Findings
Achieved single-shot diffraction patterns for aluminum and 1T-TaS2.
Demonstrated 130 fs temporal resolution in observing material dynamics.
Confirmed electron beam emittance of ~50 nm-rad and coherence lengths of ~11 nm and ~2.5 nm.
Abstract
We report the experimental demonstration of femtosecond electron diffraction using high-brightness MeV electron beams. High-quality, single-shot electron diffraction patterns for both polycrystalline aluminum and single-crystal 1T-TaS2 are obtained utilizing a 5 femto-Coulomb (~3x10^4 electrons) pulse of electrons at 2.8 MeV. The high quality of the electron diffraction patterns confirm that electron beam has a normalized emittance of ~50 nm-rad. The corresponding transverse and longitudinal coherence length are ~11 nm and ~2.5 nm, respectively. The timing jitter between the pump laser and probe electron beam was found to be ~ 100 fs (rms). The temporal resolution is demonstrated by observing the evolution of Bragg and superlattice peaks of 1T-TaS2 following an 800 nm optical pump and was found to be 130 fs. Our results demonstrate the advantages of MeV electron diffraction: such as…
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Taxonomy
TopicsAdvanced Electron Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis · Advanced X-ray Imaging Techniques
