Simulation Study of Ge p-type Nanowire Schottky Barrier MOSFETs

TL;DR

This study uses quantum-mechanical simulations to analyze Germanium p-type nanowire Schottky barrier MOSFETs, revealing their superior performance over silicon devices in terms of current injection and subthreshold slope.

Contribution

It provides a comprehensive quantum-mechanical analysis of Ge p-type nanowire SB-MOSFETs, highlighting optimal orientations and device parameters for enhanced performance.

Findings

111 orientation yields best device performance

Ge devices have higher on-current and steeper subthreshold slope than Si

EOT gain of 0.2-0.5 nm over Si devices predicted

Abstract

Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of devices with 100, 110, and 111 channel orientations, respectively, by varying the nanowire width, Schottky barrier height, and EOT. The 111 oriented devices showed the best performance. In comparison to Si as a channel material, Ge is more desirable because more current can be injected into the channel, resulting in steeper subthreshold slope and higher on-state current. Our calculations predict that the Ge channel devices should have an EOT gain of 0.2-0.5 nm over Si channel devices.