Modulation Coding for Flash Memories
Yongjune Kim, Kyoung Lae Cho, Hongrak Son, Jaehong Kim, Jun Jin Kong,, Jaejin Lee, B. V. K. Vijaya Kumar

TL;DR
This paper addresses data reliability issues in scaled flash memories by categorizing vulnerable data patterns and proposing modulation coding schemes to transform these into more robust patterns, enhancing overall reliability.
Contribution
It introduces a new categorization of data patterns based on degradation mechanisms and pattern dependency, along with modulation coding schemes to improve flash memory reliability.
Findings
Pattern-dependent degradation mechanisms identified
Proposed modulation coding schemes effectively transform vulnerable patterns
Improved data reliability in flash memories
Abstract
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect of these mechanisms has pattern dependency and some data patterns are more vulnerable than other ones. In this paper, we will categorize data patterns taking into account degradation mechanisms and pattern dependency. In addition, we propose several modulation coding schemes to improve the data reliability by transforming original vulnerable data patterns into more robust ones.
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