Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot

TL;DR

This paper investigates how excitation power and temperature affect the coherence and radiative lifetime of a single InAs/GaAs quantum dot, revealing excitation-induced dephasing and enhanced emission coupling in a waveguide.

Contribution

It provides the first direct measurements of coherence and lifetime variations in a quantum dot under resonant excitation, highlighting phonon interactions and waveguide coupling effects.

Findings

Dephasing is mainly due to acoustic phonon coupling.

Resonant strong coupling enhances radiative recombination.

Emission couples efficiently into the waveguide mode.

Abstract

We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode leading to an additional relaxation term of the excited state population.